1. Overview of Equipment and Application Fields

The vacuum tube chemical vapor deposition (CVD) system CVD-60-12 is a high-end experimental apparatus specifically designed for advanced nanomaterial research. The model designation "60" indicates its standard Φ60mm reaction tube diameter, while "12" signifies a maximum operating temperature of 1200°C. This system utilizes gaseous precursors to undergo chemical reactions under high-temperature vacuum or protective atmospheres, depositing solid thin films on substrate surfaces. It is particularly suitable for the growth of two-dimensional materials such as graphene, carbon nanotubes, transition metal sulfides (e.g., MoS₂), boron nitride, as well as various semiconductors, optical coatings, and hard coatings. Its dual-temperature zone independent temperature control design enables precise regulation of the temperature gradient between precursor evaporation and reaction deposition, making it a core equipment for cutting-edge material exploration in universities, research institutes, and high-tech enterprises.

2. Core Functional Highlights

· The dual-zone independent precision temperature control system utilizes high-quality silicon carbide rods or resistance wire heating elements, featuring a dual-zone independent PID temperature control module. Each zone can be set to different temperatures (up to 1200°C), with a precision of **±1℃**. This design enables users to precisely control the sublimation rate of solid/liquid precursors in the front zone while optimizing reaction crystallization conditions on the substrate surface in the rear zone, achieving high-quality single-crystal or polycrystalline thin film growth. Supporting 30 programmed temperature curves, it meets complex process requirements.

· High-purity quartz reaction chamber The reaction chamber is constructed with high-purity (99.99%) quartz tubes (specifications: Φ60mm × 1000mm), which exhibit excellent high-temperature resistance and corrosion resistance, and do not introduce metal impurities to contaminate the samples. The flange adopts a stainless steel quick-release structure, ensuring reliable sealing, easy disassembly, and convenient replacement of substrates or cleaning of the chamber.

· The precision multi-channel gas delivery system integrates 4 to 6 high-purity gas pipelines, each equipped with an imported mass flow controller (MFC) with a wide flow control range (e.g., 0-100 SCCM) and an accuracy of ±1% F.S. The system supports precise ratio matching and rapid switching of reaction gases (e.g., CH₄, H₂, NH₃), carrier gases (Ar, N₂), and doped gases. Its unique bypass exhaust design minimizes pressure fluctuations in the reaction chamber during gas switching.

· The wide-range vacuum and pressure control system supports both atmospheric pressure chemical vapor deposition (APCVD) and low-pressure chemical vapor deposition (LPCVD) processes. It features a high-performance rotary vane mechanical pump with a maximum vacuum of 5×10⁻³ Pa, and an optional molecular pump set can achieve 10⁻⁴ Pa. The system includes a high-precision vacuum gauge for real-time chamber pressure monitoring, and manual or electric valves allow flexible adjustment of the reaction chamber pressure to provide optimal conditions for material growth.

· Intelligent Security and Rapid Cooling

o Safety interlock: Equipped with over-temperature alarm, water cutoff protection (for water-cooled flange models), overcurrent protection, and leakage current protection to ensure experimental safety.

o Rapid cooling: Some configurations are equipped with an optional forced air cooling system. After the reaction is completed, the furnace is cooled by a fan to effectively "freeze" the high-temperature crystal structure and prevent excessive grain growth. This system is particularly suitable for the preparation of nanomaterials where cooling rate sensitivity is critical.

o Intelligent Control: Equipped with a PLC-based touchscreen control system, the interface displays key parameters including temperature, vacuum level, and gas flow rate in real-time, with built-in functionality for process data recording and export.

3. Typical Application Scenarios

· Graphene preparation: Large-area single/multi-layer graphene is grown on copper or nickel foil for transparent conductive films and sensor research.

· Growth of carbon nanotubes: Preparation of single-walled and multi-walled carbon nanotube arrays for use in composite reinforcement and field emission devices.

· Two-dimensional semiconductor materials: growth of TMDs such as molybdenum disulfide (MoS₂), tungsten disulfide (WS₂), and hexagonal boron nitride (h-BN).

· Semiconductor thin film epitaxy: Preparation of zinc oxide (ZnO) and gallium nitride (GaN) nanowires or thin films.

· Optical and hard coatings: deposition of diamond-like carbon (DLC) films, antireflection coatings, and high-temperature resistant protective coatings.

· Battery material modification: Surface carbon coating treatment of lithium-ion battery electrode materials.

4. Why choose the CVD-60-12 system?

The CVD-60-12 vacuum tube chemical vapor deposition system achieves optimal balance between sample loading capacity and temperature uniformity through its exceptional dual-temperature zone control and 60mm gold-standard reaction chamber, establishing itself as a benchmark configuration for graphene and two-dimensional material research. Its high-precision gas control system and stable vacuum performance ensure highly reproducible experimental results. Featuring an intelligent operation interface and comprehensive safety protections, this system not only lowers operational barriers but also ensures laboratory safety. Whether for basic teaching demonstrations or cutting-edge scientific research, the CVD-60-12 stands as your trusted partner, enabling continuous breakthroughs in nanomaterials and delivering high-level research outcomes.

5. CVD (Chemical Vapor Deposition) Tubular Furnace